View BSC0908NS_2777977.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

i ndus t ri al & m ul t i m ark et d at a s heet 3.1, 2010-10-18 final optimos ? BSC0908NS n -c hannel pow er mo s fet
optimos ? power-mosfet BSC0908NS final data sheet 1 3.1, 2010-10-18 1 description optimos ? 30v products are class leading power mosfets for highest power density and energy efficient solutions. ultra low gate- and output charges together with lowest on state resistance in small footprint packages make optimos ? 30v the best choice forthe demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. super fast switching control fets together with low emi sync fets provide solutions that are easy to design in. optimos ? products are available in high performancepackages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. optimos ? products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications features ? optimized for high performance buck converter ? 100% avalanche tested ? very low on-resistance r ds(on) @ v gs =4.5 v ? ultra low gate (q g ) and output charge (q oss ) for given r ds(on) ? qualified according to jedec 1) for target applications ? superior thermal resistance ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 applications ? on board power for server ? power managment for high performance computing ? synchronous rectification ? high power density point of load converters 1) j-std20 and jesd22 table 1 key performance parameters parameter value unit related links v ds 34 v ifx optimos webpage r ds(on),max 8 m # ifx optimos product brief i d 49 a ifx optimos spice models q oss 11 nc nc ifx design tools q g . typ 6.8 type package marking BSC0908NS pg-tdson-8 0908ns
optimos ? power-mosfet BSC0908NS final data sheet 2 3.1, 2010-10-18 2 maximum ratings at t j = 25 c, unless otherwise specified. 3 thermal characteristics table 2 maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current i d - - 49 a v gs =10 v, t c =25 c 31 v gs =10 v, t c =100 c 39 v gs =4.5 v, t c =25 c 25 v gs =4.5 v, t c =100 c 14 v gs =10 v, t a =25 c, r thja =50 k/w 1) ) 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. pulsed drain current 2) 2) see figure 3 for more detailed information i d,pulse - - 196 t c =25 c avalanche current, single pulse i as - - 35 avalanche energy, single pulse e as - - 10 mj i d =30 a, r gs =25 # gate source voltage v gs -20 - 20 v power dissipation p tot - - 30 w t c =25 c 2.5 t a =25 c, r thja =50 k/w 1) ) operating and storage temperature t j , t stg -55 - 150 c iec climatic category; din iec 68-1 55 150 56 ncm table 3 thermal characteristics parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - - 4.2 k/w bottom 20 top device on pcb r thja - - 50 6 cm 2 cooling area 1) 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air
optimos ? power-mosfet BSC0908NS electrical characteristics final data sheet 3 3.1, 2010-10-18 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified. table 4 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 34 - - v v gs =0 v, i d =1.0 ma gate threshold voltage v gs(th) 1 - 2.2 v ds = v gs , i d =250 a zero gate voltage drain current i dss - 0.1 1 a v ds =34 v, v gs =0 v, t j =25 c - 10 100 v ds =34 v, v gs =0 v, t j =125 c gate-source leakage current i gss - 10 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) - 10.2 12.8 m # v gs =4.5 v, i d =30 a, - 6.7 8 v gs =10 v, i d =30 a, gate resistance r g - 3 - # transconductance g fs 28 56 s | v ds |>2| i d|rds(on)max , i d =30 a table 5 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss - 1220 - pf v gs =0 v, v ds =15 v, f =1 mhz output capacitance c oss - 445 - reverse transfer capacitance c rss - 24 - turn-on delay time t d(on) - 4.6 - ns v dd =15 v, v gs =10 v, i d =30 a, r g = 1.6 # rise time t r - 2.6 - turn-off delay time t d(off) - 16.4 - fall time t f - 2.8 -
optimos ? power-mosfet BSC0908NS electrical characteristics final data sheet 4 3.1, 2010-10-18 table 6 gate charge characteristics 1) 1) see figure 16 for gate charge parameter definition parameter symbol values unit note / test condition min. typ. max. gate to source charge q gs - 3.7 - nc v dd =15 v, i d =30 a, v gs =0 to 4.5 v gate charge at threshold q g(th) - 1.8 - gate to drain charge q gd - 1.8 - switching charge q sw - 3.6 - gate charge total q g - 6.8 - gate plateau voltage v plateau - 3.4 - v gate charge total q g - 14 - nc v dd =15 v, i d =30 a, v gs =0 to 10v gate charge total, sync. fet q g(sync) 5.9 v ds =0.1 v, v gs =0 to 4.5 v output charge q oss 11 v dd =15 v, v gs =0 v table 7 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode continuous forward current i s 27 a t c =25 c diode pulse current i s,pulse 108 diode forward voltage v sd - 0.9 - v v gs =0 v, i f =30 a, t j =25 c reverse recovery charge q rr - 5 - nc v r =15 v, i f = i s , d i f /d t =400 a/s
optimos ? power-mosfet BSC0908NS electrical characteristics diagrams final data sheet 5 3.1, 2010-10-18 5 electrical characteristics diagrams table 8 1 power dissipation 2 drain current p tot = f( t c ) i d =f(t c ); parameter :v gs table 9 3 safe operating area t c =25 c 4 max. transient thermal impedance i d =f( v ds ); t j =25 c; d=0; parameter: t p z (thjc) =f( t p ); parameter: d= t p / t
optimos ? power-mosfet BSC0908NS electrical characteristics diagrams final data sheet 6 3.1, 2010-10-18 table 10 5 typ. output characteristics t c =25 c 6 typ. drain-source on-state resistance i d =f( v ds ); t j =25 c; parameter: v gs r ds(on) =f( i d ); t j =25 c; parameter: v gs table 11 7 typ. transfer characteristics 8 typ. forward transconductance i d =f(vgs); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c
optimos ? power-mosfet BSC0908NS electrical characteristics diagrams final data sheet 7 3.1, 2010-10-18 table 12 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =30 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; i d =250 a table 13 11 typ. capacitances 12 forward characteristics of reverse diode c=f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ); parameter: t j
optimos ? power-mosfet BSC0908NS electrical characteristics diagrams final data sheet 8 3.1, 2010-10-18 table 14 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 parameter: t j(start) v gs =f( q gate ); i d =30 a pulsed; parameter: v dd table 15 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma
optimos ? power-mosfet BSC0908NS package outline final data sheet 9 3.1, 2010-10-18 6 package outline figure 1 outlines pg-tdson-8, dimensions in mm/inches
optimos ? power-mosfet BSC0908NS package outline final data sheet 10 3.1, 2010-10-18 figure 2 outlines pg-tdson-8 tape, dimension in mm/inches
optimos ? power-mosfet BSC0908NS revision history final data sheet 11 3.1, 2010-10-18 7 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2010-10-18 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. revision history: 2010-10-18, 3.1 previous revision: revision subjects (major changes since last revision) 0.9 release of target data sheet 2.0 release final version

▲Up To Search▲

Price & Availability of BSC0908NS

	To Download BSC0908NS Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .